Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating
نویسندگان
چکیده
منابع مشابه
Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer
There is a rising interest in employing the negative capacitance (NC) effect to achieve sub-60 mV/ decade (below the thermal limit) switching in field-effect transistors (FETs). The NC effect, which is an effectual amplification of the applied gate potential, is realized by incorporating a ferroelectric material in series with a dielectric in the gate stack of a FET. One of the leading challeng...
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ژورنال
عنوان ژورنال: npj 2D Materials and Applications
سال: 2017
ISSN: 2397-7132
DOI: 10.1038/s41699-017-0040-4